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Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems

Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems

MOQ: 1
Price: €220.24
Detail Information
Place of Origin
Guangdong, China
Brand Name
TTSK
Model Number
TTSK-TG-GAN-50W
Type:
RF Module
Application Type:
Defense System
Power Consumption:
50W
Dimensions:
170*94*26.5mm
Warranty:
1 Year
Frequency:
6500~6700, 6700~6900, 6900~7200MHz
Product Name:
50W RF Module
Brand:
Tatusky
Shipping By:
DHL\UPS\Fedex\EMS\HK Post\More
Payment:
Paypal\TT\Western Union\Trade Assurance
Size:
170*94*26.5mm
Function:
Wireless Products
Power:
50W
LEAD TIME:
1-3 Working Days
Product Description
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
Parameter
Unit
Min.
Typ.
Max.
Symbol
Operating Frequency
MHz
6500–6700, 6700–6900, 6900–7200
Bandwidth
MHz
-
200
-
BW
Peak Output Power (CW signal)
W
-
50
-
PSAT
Efficiency
%
-
28
-
EFF
Harmonics (1st–Nth, @70W)
dBc
10
-
-
HN
Spurious Emission
dBc
60
-
-
Spur
Input VSWR
-
-
-
2:1
VSWR
Output VSWR
-
-
-
2:1
VSWR
Operating Voltage
V
28
-
-
VDC
Current Consumption
A
5.5
-
-
IDC
Parameter
Unit
Typ.
Weight
kg
0.4
Dimensions
mm
132 × 53 × 17
RF Connector
-
RF output: SMA female
DC Connector
-
Power supply: Feedthrough capacitor male
Cooling Method
-
External heat sink required
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
FAQ

What are the criteria for selecting power amplifier transistors?

Matching frequency band, power, voltage/current, and packaging; Common materials: GaN, LDMOS.

How to meet different application requirements?

5G requires high linearity and wide bandwidth; radar prioritizes pulse response and stability; industrial equipment emphasizes heat dissipation and reliability. Solutions are tailored to specific scenarios (base stations, satellites, etc.).

How to achieve multi-band compatibility?

This is achieved through broadband matching network design or modular solutions, customized to the customer's frequency requirements.
Products
PRODUCTS DETAILS
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
MOQ: 1
Price: €220.24
Detail Information
Place of Origin
Guangdong, China
Brand Name
TTSK
Model Number
TTSK-TG-GAN-50W
Type:
RF Module
Application Type:
Defense System
Power Consumption:
50W
Dimensions:
170*94*26.5mm
Warranty:
1 Year
Frequency:
6500~6700, 6700~6900, 6900~7200MHz
Product Name:
50W RF Module
Brand:
Tatusky
Shipping By:
DHL\UPS\Fedex\EMS\HK Post\More
Payment:
Paypal\TT\Western Union\Trade Assurance
Size:
170*94*26.5mm
Function:
Wireless Products
Power:
50W
LEAD TIME:
1-3 Working Days
Minimum Order Quantity:
1
Price:
€220.24
Product Description
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
Parameter
Unit
Min.
Typ.
Max.
Symbol
Operating Frequency
MHz
6500–6700, 6700–6900, 6900–7200
Bandwidth
MHz
-
200
-
BW
Peak Output Power (CW signal)
W
-
50
-
PSAT
Efficiency
%
-
28
-
EFF
Harmonics (1st–Nth, @70W)
dBc
10
-
-
HN
Spurious Emission
dBc
60
-
-
Spur
Input VSWR
-
-
-
2:1
VSWR
Output VSWR
-
-
-
2:1
VSWR
Operating Voltage
V
28
-
-
VDC
Current Consumption
A
5.5
-
-
IDC
Parameter
Unit
Typ.
Weight
kg
0.4
Dimensions
mm
132 × 53 × 17
RF Connector
-
RF output: SMA female
DC Connector
-
Power supply: Feedthrough capacitor male
Cooling Method
-
External heat sink required
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
Tatusky 50W GaN RF Power Amplifier 6500-7200MHz High Efficiency Wireless RF Module for Defense Systems
FAQ

What are the criteria for selecting power amplifier transistors?

Matching frequency band, power, voltage/current, and packaging; Common materials: GaN, LDMOS.

How to meet different application requirements?

5G requires high linearity and wide bandwidth; radar prioritizes pulse response and stability; industrial equipment emphasizes heat dissipation and reliability. Solutions are tailored to specific scenarios (base stations, satellites, etc.).

How to achieve multi-band compatibility?

This is achieved through broadband matching network design or modular solutions, customized to the customer's frequency requirements.