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TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR

TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR

MOQ: 1
Price: Rp 4.616.374
Detail Information
Place of Origin
Guangdong, China
Brand Name
TTSK
Model Number
TTSK-TG-GaN-50W
Type:
RF Module
Application Type:
Anti- Drone Security System
Power Consumption:
50W
Product Name:
Power Amplifier
Power:
50W
Payment:
Paypal\TT\Western Union\Trade Assurance
Shipping By:
DHL\UPS\Fedex\EMS\HK Post\More
Warranty:
1 Year
Condition:
Original 100%
Function:
Wireless Products
MOQ:
1 PCS
Feature:
High Power
Shipment:
DHL\UPS\FEDEX\EMS\POST.etc
Product Description
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
Parameter
Unit
Min.
Typ.
Max.
Symbol
Operating Frequency
MHz
6500–6700, 6700–6900, 6900–7200
Bandwidth
MHz
-
200
-
BW
Peak Output Power (CW signal)
W
-
50
-
PSAT
Efficiency
%
-
28
-
EFF
Harmonics (1st–Nth, @70W)
dBc
10
-
-
HN
Spurious Emission
dBc
60
-
-
Spur
Input VSWR
-
-
-
2:1
VSWR
Output VSWR
-
-
-
2:1
VSWR
Operating Voltage
V
28
-
-
VDC
Current Consumption
A
5.5
-
-
IDC
Parameter
Unit
Typ.
Weight
kg
0.4
Dimensions
mm
132 × 53 × 17
RF Connector
-
RF output: SMA female
DC Connector
-
Power supply: Feedthrough capacitor male
Cooling Method
-
External heat sink required
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
FAQ

What are the criteria for selecting power amplifier transistors?

Matching frequency band, power, voltage/current, and packaging; Common materials: GaN, LDMOS.

How to meet different application requirements?

5G requires high linearity and wide bandwidth; radar prioritizes pulse response and stability; industrial equipment emphasizes heat dissipation and reliability. Solutions are tailored to specific scenarios (base stations, satellites, etc.).

How to achieve multi-band compatibility?

This is achieved through broadband matching network design or modular solutions, customized to the customer's frequency requirements.
Products
PRODUCTS DETAILS
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
MOQ: 1
Price: Rp 4.616.374
Detail Information
Place of Origin
Guangdong, China
Brand Name
TTSK
Model Number
TTSK-TG-GaN-50W
Type:
RF Module
Application Type:
Anti- Drone Security System
Power Consumption:
50W
Product Name:
Power Amplifier
Power:
50W
Payment:
Paypal\TT\Western Union\Trade Assurance
Shipping By:
DHL\UPS\Fedex\EMS\HK Post\More
Warranty:
1 Year
Condition:
Original 100%
Function:
Wireless Products
MOQ:
1 PCS
Feature:
High Power
Shipment:
DHL\UPS\FEDEX\EMS\POST.etc
Minimum Order Quantity:
1
Price:
Rp 4.616.374
Product Description
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
Parameter
Unit
Min.
Typ.
Max.
Symbol
Operating Frequency
MHz
6500–6700, 6700–6900, 6900–7200
Bandwidth
MHz
-
200
-
BW
Peak Output Power (CW signal)
W
-
50
-
PSAT
Efficiency
%
-
28
-
EFF
Harmonics (1st–Nth, @70W)
dBc
10
-
-
HN
Spurious Emission
dBc
60
-
-
Spur
Input VSWR
-
-
-
2:1
VSWR
Output VSWR
-
-
-
2:1
VSWR
Operating Voltage
V
28
-
-
VDC
Current Consumption
A
5.5
-
-
IDC
Parameter
Unit
Typ.
Weight
kg
0.4
Dimensions
mm
132 × 53 × 17
RF Connector
-
RF output: SMA female
DC Connector
-
Power supply: Feedthrough capacitor male
Cooling Method
-
External heat sink required
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
TTSK 50W High Output RF GaN Power Amplifier Module | Anti-Drone Signal Booster | Class AB Design | High Linearity VSWR
FAQ

What are the criteria for selecting power amplifier transistors?

Matching frequency band, power, voltage/current, and packaging; Common materials: GaN, LDMOS.

How to meet different application requirements?

5G requires high linearity and wide bandwidth; radar prioritizes pulse response and stability; industrial equipment emphasizes heat dissipation and reliability. Solutions are tailored to specific scenarios (base stations, satellites, etc.).

How to achieve multi-band compatibility?

This is achieved through broadband matching network design or modular solutions, customized to the customer's frequency requirements.